Low-temperature growth of highly crystalline β-Ga(2)O(3) nanowires by solid-source chemical vapor deposition

Growing Ga(2)O(3) dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga(2)O(3) nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor...

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Detalles Bibliográficos
Autores principales: Han, Ning, Wang, Fengyun, Yang, Zaixing, Yip, SenPo, Dong, Guofa, Lin, Hao, Fang, Ming, Hung, TakFu, Ho, Johnny C
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4105120/
https://www.ncbi.nlm.nih.gov/pubmed/25114641
http://dx.doi.org/10.1186/1556-276X-9-347

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4105120/
https://www.ncbi.nlm.nih.gov/pubmed/25114641
http://dx.doi.org/10.1186/1556-276X-9-347

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