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Low-temperature growth of highly crystalline β-Ga(2)O(3) nanowires by solid-source chemical vapor deposition
Growing Ga(2)O(3) dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga(2)O(3) nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4105120/ https://www.ncbi.nlm.nih.gov/pubmed/25114641 http://dx.doi.org/10.1186/1556-276X-9-347 |