Study of Multi-level Characteristics for 3D Vertical Resistive Switching Memory

Three-dimensional (3D) integration and multi-level cell (MLC) are two attractive technologies to achieve ultra-high density for mass storage applications. In this work, a three-layer 3D vertical AlO(δ)/Ta(2)O(5-x)/TaO(y) resistive random access memories were fabricated and characterized. The vertica...

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Detalles Bibliográficos
Autores principales: Bai, Yue, Wu, Huaqiang, Wu, Riga, Zhang, Ye, Deng, Ning, Yu, Zhiping, Qian, He
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4105739/
https://www.ncbi.nlm.nih.gov/pubmed/25047906
http://dx.doi.org/10.1038/srep05780

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4105739/
https://www.ncbi.nlm.nih.gov/pubmed/25047906
http://dx.doi.org/10.1038/srep05780

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