Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy

The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/...

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Detalles Bibliográficos
Autores principales: Liu, T., Zhang, Y., Cai, J. W., Pan, H. Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4118150/
https://www.ncbi.nlm.nih.gov/pubmed/25081387
http://dx.doi.org/10.1038/srep05895

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4118150/
https://www.ncbi.nlm.nih.gov/pubmed/25081387
http://dx.doi.org/10.1038/srep05895

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