Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape o...

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Detalles Bibliográficos
Autores principales: Persichetti, Luca, Sgarlata, Anna, Mori, Stefano, Notarianni, Marco, Cherubini, Valeria, Fanfoni, Massimo, Motta, Nunzio, Balzarotti, Adalberto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4119939/
https://www.ncbi.nlm.nih.gov/pubmed/25114649
http://dx.doi.org/10.1186/1556-276X-9-358

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4119939/
https://www.ncbi.nlm.nih.gov/pubmed/25114649
http://dx.doi.org/10.1186/1556-276X-9-358

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