Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape o...

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Autores principales: Persichetti, Luca, Sgarlata, Anna, Mori, Stefano, Notarianni, Marco, Cherubini, Valeria, Fanfoni, Massimo, Motta, Nunzio, Balzarotti, Adalberto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4119939/
https://www.ncbi.nlm.nih.gov/pubmed/25114649
http://dx.doi.org/10.1186/1556-276X-9-358
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author Persichetti, Luca
Sgarlata, Anna
Mori, Stefano
Notarianni, Marco
Cherubini, Valeria
Fanfoni, Massimo
Motta, Nunzio
Balzarotti, Adalberto
author_facet Persichetti, Luca
Sgarlata, Anna
Mori, Stefano
Notarianni, Marco
Cherubini, Valeria
Fanfoni, Massimo
Motta, Nunzio
Balzarotti, Adalberto
author_sort Persichetti, Luca
collection PubMed
description We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain. PACS: 81.07.Gf; 68.35.bg; 68.35.bj; 62.23.Eg
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spelling pubmed-41199392014-08-11 Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires Persichetti, Luca Sgarlata, Anna Mori, Stefano Notarianni, Marco Cherubini, Valeria Fanfoni, Massimo Motta, Nunzio Balzarotti, Adalberto Nanoscale Res Lett Nano Express We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain. PACS: 81.07.Gf; 68.35.bg; 68.35.bj; 62.23.Eg Springer 2014-07-16 /pmc/articles/PMC4119939/ /pubmed/25114649 http://dx.doi.org/10.1186/1556-276X-9-358 Text en Copyright © 2014 Persichetti et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Persichetti, Luca
Sgarlata, Anna
Mori, Stefano
Notarianni, Marco
Cherubini, Valeria
Fanfoni, Massimo
Motta, Nunzio
Balzarotti, Adalberto
Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
title Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
title_full Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
title_fullStr Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
title_full_unstemmed Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
title_short Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
title_sort beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of ge in-plane nanowires
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4119939/
https://www.ncbi.nlm.nih.gov/pubmed/25114649
http://dx.doi.org/10.1186/1556-276X-9-358
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