Cargando…

TaO(x)-based resistive switching memories: prospective and challenges

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaO(x) is one of the prosp...

Descripción completa

Detalles Bibliográficos
Autores principales: Prakash, Amit, Jana, Debanjan, Maikap, Siddheswar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4124699/
https://www.ncbi.nlm.nih.gov/pubmed/24107610
http://dx.doi.org/10.1186/1556-276X-8-418