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Copper pillar and memory characteristics using Al(2)O(3) switching material for 3D architecture
A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al(2)O(3)/TiN structure is simple and low cost. The Cu pillar is forme...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4130702/ https://www.ncbi.nlm.nih.gov/pubmed/25136279 http://dx.doi.org/10.1186/1556-276X-9-366 |