Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone

[Image: see text] We present an Al(2)O(3) dielectric layer on molybdenum disulfide (MoS(2)), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using...

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Detalles Bibliográficos
Autores principales: Cheng, Lanxia, Qin, Xiaoye, Lucero, Antonio T., Azcatl, Angelica, Huang, Jie, Wallace, Robert M., Cho, Kyeongjae, Kim, Jiyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4134179/
https://www.ncbi.nlm.nih.gov/pubmed/25025335
http://dx.doi.org/10.1021/am5032105

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4134179/
https://www.ncbi.nlm.nih.gov/pubmed/25025335
http://dx.doi.org/10.1021/am5032105

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