Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone

[Image: see text] We present an Al(2)O(3) dielectric layer on molybdenum disulfide (MoS(2)), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al(2)O(3) layers, in contrast to the incomplete coverage we observe when using TMA/H(2)O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS(2) structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone.