Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone

[Image: see text] We present an Al(2)O(3) dielectric layer on molybdenum disulfide (MoS(2)), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using...

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Autores principales: Cheng, Lanxia, Qin, Xiaoye, Lucero, Antonio T., Azcatl, Angelica, Huang, Jie, Wallace, Robert M., Cho, Kyeongjae, Kim, Jiyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4134179/
https://www.ncbi.nlm.nih.gov/pubmed/25025335
http://dx.doi.org/10.1021/am5032105
_version_ 1782330835509182464
author Cheng, Lanxia
Qin, Xiaoye
Lucero, Antonio T.
Azcatl, Angelica
Huang, Jie
Wallace, Robert M.
Cho, Kyeongjae
Kim, Jiyoung
author_facet Cheng, Lanxia
Qin, Xiaoye
Lucero, Antonio T.
Azcatl, Angelica
Huang, Jie
Wallace, Robert M.
Cho, Kyeongjae
Kim, Jiyoung
author_sort Cheng, Lanxia
collection PubMed
description [Image: see text] We present an Al(2)O(3) dielectric layer on molybdenum disulfide (MoS(2)), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al(2)O(3) layers, in contrast to the incomplete coverage we observe when using TMA/H(2)O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS(2) structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone.
format Online
Article
Text
id pubmed-4134179
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-41341792015-07-15 Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone Cheng, Lanxia Qin, Xiaoye Lucero, Antonio T. Azcatl, Angelica Huang, Jie Wallace, Robert M. Cho, Kyeongjae Kim, Jiyoung ACS Appl Mater Interfaces [Image: see text] We present an Al(2)O(3) dielectric layer on molybdenum disulfide (MoS(2)), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al(2)O(3) layers, in contrast to the incomplete coverage we observe when using TMA/H(2)O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS(2) structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone. American Chemical Society 2014-07-15 2014-08-13 /pmc/articles/PMC4134179/ /pubmed/25025335 http://dx.doi.org/10.1021/am5032105 Text en Copyright © 2014 American Chemical Society Terms of Use (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html)
spellingShingle Cheng, Lanxia
Qin, Xiaoye
Lucero, Antonio T.
Azcatl, Angelica
Huang, Jie
Wallace, Robert M.
Cho, Kyeongjae
Kim, Jiyoung
Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
title Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
title_full Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
title_fullStr Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
title_full_unstemmed Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
title_short Atomic Layer Deposition of a High-k Dielectric on MoS(2) Using Trimethylaluminum and Ozone
title_sort atomic layer deposition of a high-k dielectric on mos(2) using trimethylaluminum and ozone
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4134179/
https://www.ncbi.nlm.nih.gov/pubmed/25025335
http://dx.doi.org/10.1021/am5032105
work_keys_str_mv AT chenglanxia atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT qinxiaoye atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT luceroantoniot atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT azcatlangelica atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT huangjie atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT wallacerobertm atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT chokyeongjae atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone
AT kimjiyoung atomiclayerdepositionofahighkdielectriconmos2usingtrimethylaluminumandozone

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