Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor

The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to t...

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Detalles Bibliográficos
Autores principales: Cheng, Ya-Chi, Chen, Hung-Bin, Han, Ming-Hung, Lu, Nan-Heng, Su, Jun-Ji, Shao, Chi-Shen, Wu, Yung-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4137723/
https://www.ncbi.nlm.nih.gov/pubmed/25147491
http://dx.doi.org/10.1186/1556-276X-9-392

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4137723/
https://www.ncbi.nlm.nih.gov/pubmed/25147491
http://dx.doi.org/10.1186/1556-276X-9-392

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