Optically decomposed near-band-edge structure and excitonic transitions in Ga(2)S(3)

The band-edge structure and band gap are key parameters for a functional chalcogenide semiconductor to its applications in optoelectronics, nanoelectronics, and photonics devices. Here, we firstly demonstrate the complete study of experimental band-edge structure and excitonic transitions of monocli...

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Detalles Bibliográficos
Autores principales: Ho, Ching-Hwa, Chen, Hsin-Hung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4139941/
https://www.ncbi.nlm.nih.gov/pubmed/25142550
http://dx.doi.org/10.1038/srep06143

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4139941/
https://www.ncbi.nlm.nih.gov/pubmed/25142550
http://dx.doi.org/10.1038/srep06143

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