Unconventional Transport through Graphene on SrTiO(3): A Plausible Effect of SrTiO(3) Phase-Transitions

High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO(3) (STO) thin film substrate. At carrier densities away from...

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Detalles Bibliográficos
Autores principales: Saha, Surajit, Kahya, Orhan, Jaiswal, Manu, Srivastava, Amar, Annadi, Anil, Balakrishnan, Jayakumar, Pachoud, Alexandre, Toh, Chee-Tat, Hong, Byung-Hee, Ahn, Jong-Hyun, Venkatesan, T., Özyilmaz, Barbaros
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4141260/
https://www.ncbi.nlm.nih.gov/pubmed/25146230
http://dx.doi.org/10.1038/srep06173

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4141260/
https://www.ncbi.nlm.nih.gov/pubmed/25146230
http://dx.doi.org/10.1038/srep06173

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