Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is...

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Detalles Bibliográficos
Autores principales: Roinila, Tomi, Yu, Xiao, Verho, Jarmo, Li, Tie, Kallio, Pasi, Vilkko, Matti, Gao, Anran, Wang, Yuelin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2014
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4142974/
https://www.ncbi.nlm.nih.gov/pubmed/25161832
http://dx.doi.org/10.3762/bjnano.5.110

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4142974/
https://www.ncbi.nlm.nih.gov/pubmed/25161832
http://dx.doi.org/10.3762/bjnano.5.110

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