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Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

Silicon nanowire-based field-effect transistors (SiNW FETs) have demonstrated the ability of ultrasensitive detection of a wide range of biological and chemical targets. The detection is based on the variation of the conductance of a nanowire channel, which is caused by the target substance. This is...

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Detalles Bibliográficos
Autores principales:	Roinila, Tomi, Yu, Xiao, Verho, Jarmo, Li, Tie, Kallio, Pasi, Vilkko, Matti, Gao, Anran, Wang, Yuelin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2014
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4142974/ https://www.ncbi.nlm.nih.gov/pubmed/25161832 http://dx.doi.org/10.3762/bjnano.5.110

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