Thermoelectric Seebeck effect in oxide-based resistive switching memory

Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. Howe...

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Detalles Bibliográficos
Autores principales: Wang, Ming, Bi, Chong, Li, Ling, Long, Shibing, Liu, Qi, Lv, Hangbing, Lu, Nianduan, Sun, Pengxiao, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4143917/
https://www.ncbi.nlm.nih.gov/pubmed/25141267
http://dx.doi.org/10.1038/ncomms5598

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4143917/
https://www.ncbi.nlm.nih.gov/pubmed/25141267
http://dx.doi.org/10.1038/ncomms5598

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