The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics

When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical const...

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Detalles Bibliográficos
Autores principales: Wong, Hei, Zhou, Jian, Zhang, Jieqiong, Jin, Hao, Kakushima, Kuniyuki, Iwai, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159380/
https://www.ncbi.nlm.nih.gov/pubmed/25246873
http://dx.doi.org/10.1186/1556-276X-9-472

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159380/
https://www.ncbi.nlm.nih.gov/pubmed/25246873
http://dx.doi.org/10.1186/1556-276X-9-472

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