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The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical const...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159380/ https://www.ncbi.nlm.nih.gov/pubmed/25246873 http://dx.doi.org/10.1186/1556-276X-9-472 |