Low Al-composition p-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Low Al-composition p-GaN/Mg-doped Al(0.25)Ga(0.75)N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was...

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Detalles Bibliográficos
Autores principales: Zhang, Kexiong, Liang, Hongwei, Liu, Yang, Shen, Rensheng, Guo, Wenping, Wang, Dongsheng, Xia, Xiaochuan, Tao, Pengcheng, Yang, Chao, Luo, Yingmin, Du, Guotong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159626/
https://www.ncbi.nlm.nih.gov/pubmed/25205042
http://dx.doi.org/10.1038/srep06322

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159626/
https://www.ncbi.nlm.nih.gov/pubmed/25205042
http://dx.doi.org/10.1038/srep06322

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