Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device

The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial res...

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Detalles Bibliográficos
Autores principales: Yuan, Fang, Zhang, Zhigang, Wang, Jer-Chyi, Pan, Liyang, Xu, Jun, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159639/
https://www.ncbi.nlm.nih.gov/pubmed/25246866
http://dx.doi.org/10.1186/1556-276X-9-452

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159639/
https://www.ncbi.nlm.nih.gov/pubmed/25246866
http://dx.doi.org/10.1186/1556-276X-9-452

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