Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device

The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial res...

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Detalles Bibliográficos
Autores principales: Yuan, Fang, Zhang, Zhigang, Wang, Jer-Chyi, Pan, Liyang, Xu, Jun, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159639/
https://www.ncbi.nlm.nih.gov/pubmed/25246866
http://dx.doi.org/10.1186/1556-276X-9-452
Descripción
Sumario:The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO( x )/Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.

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