Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device

The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial res...

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Detalles Bibliográficos
Autores principales: Yuan, Fang, Zhang, Zhigang, Wang, Jer-Chyi, Pan, Liyang, Xu, Jun, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159639/
https://www.ncbi.nlm.nih.gov/pubmed/25246866
http://dx.doi.org/10.1186/1556-276X-9-452
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author Yuan, Fang
Zhang, Zhigang
Wang, Jer-Chyi
Pan, Liyang
Xu, Jun
Lai, Chao-Sung
author_facet Yuan, Fang
Zhang, Zhigang
Wang, Jer-Chyi
Pan, Liyang
Xu, Jun
Lai, Chao-Sung
author_sort Yuan, Fang
collection PubMed
description The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO( x )/Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.
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spelling pubmed-41596392014-09-22 Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device Yuan, Fang Zhang, Zhigang Wang, Jer-Chyi Pan, Liyang Xu, Jun Lai, Chao-Sung Nanoscale Res Lett Nano Express The total ionizing dose (TID) effects of (60)Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO( x )/Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO( x )/Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications. Springer 2014-08-29 /pmc/articles/PMC4159639/ /pubmed/25246866 http://dx.doi.org/10.1186/1556-276X-9-452 Text en Copyright © 2014 Yuan et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Yuan, Fang
Zhang, Zhigang
Wang, Jer-Chyi
Pan, Liyang
Xu, Jun
Lai, Chao-Sung
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
title Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
title_full Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
title_fullStr Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
title_full_unstemmed Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
title_short Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
title_sort total ionizing dose (tid) effects of γ ray radiation on switching behaviors of ag/alo( x )/pt rram device
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159639/
https://www.ncbi.nlm.nih.gov/pubmed/25246866
http://dx.doi.org/10.1186/1556-276X-9-452
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