Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs

[Image: see text] The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C(60)-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (V(th)) shift was found to depend cri...

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Detalles Bibliográficos
Autores principales: Ahmed, Rizwan, Kadashchuk, Andrey, Simbrunner, Clemens, Schwabegger, Günther, Baig, Muhammad Aslam, Sitter, Helmut
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159991/
https://www.ncbi.nlm.nih.gov/pubmed/25142130
http://dx.doi.org/10.1021/am5032192

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159991/
https://www.ncbi.nlm.nih.gov/pubmed/25142130
http://dx.doi.org/10.1021/am5032192

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