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Geometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C(60)-Based OFETs
[Image: see text] The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C(60)-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (V(th)) shift was found to depend cri...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4159991/ https://www.ncbi.nlm.nih.gov/pubmed/25142130 http://dx.doi.org/10.1021/am5032192 |