Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

This study examined the correlation between the off-state leakage current and dynamic on-resistance (R(ON)) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The R(ON) transients in a Schottky-gate HFET (SGHFET...

Descripción completa

Detalles Bibliográficos
Autores principales: Liao, Wen-Chia, Chen, Yan-Lun, Chen, Zheng-Xing, Chyi, Jen-Inn, Hsin, Yue-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4160917/
https://www.ncbi.nlm.nih.gov/pubmed/25258601
http://dx.doi.org/10.1186/1556-276X-9-474

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4160917/
https://www.ncbi.nlm.nih.gov/pubmed/25258601
http://dx.doi.org/10.1186/1556-276X-9-474

Ejemplares similares