Cargando…

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

This study examined the correlation between the off-state leakage current and dynamic on-resistance (R(ON)) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The R(ON) transients in a Schottky-gate HFET (SGHFET...

Descripción completa

Detalles Bibliográficos
Autores principales:	Liao, Wen-Chia, Chen, Yan-Lun, Chen, Zheng-Xing, Chyi, Jen-Inn, Hsin, Yue-Ming
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4160917/ https://www.ncbi.nlm.nih.gov/pubmed/25258601 http://dx.doi.org/10.1186/1556-276X-9-474

Ejemplares similares

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
por: Liu, Xiao-Yong, et al.
Publicado: (2015)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
por: Li, Liuan, et al.
Publicado: (2014)

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
por: Besendörfer, Sven, et al.
Publicado: (2020)

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
por: Sun, Tao, et al.
Publicado: (2020)

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor
por: Mallem, Siva Pratap Reddy, et al.
Publicado: (2023)

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
por: Dub, Maksym, et al.
Publicado: (2020)

Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
por: Lv, Yuanjie, et al.
Publicado: (2012)

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
por: Shih, Huan-Yu, et al.
Publicado: (2016)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
por: Kim, Tae-Hyeon, et al.
Publicado: (2021)

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
por: Zhang, Hanyuan, et al.
Publicado: (2020)

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2021)

Origins of the Schottky Barrier to a 2DHG in a Au/Ni/GaN/AlGaN/GaN Heterostructure
por: Do, Huy-Binh, et al.
Publicado: (2022)

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
por: Baek, Seung-Hye, et al.
Publicado: (2021)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications
por: Zhang, Meng, et al.
Publicado: (2023)

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
por: Wu, Tian-Li, et al.
Publicado: (2020)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018)

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al(2)O(3)/AlN Composite Gate Insulator
por: Chiu, Hsien-Chin, et al.
Publicado: (2021)

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure
por: Abidin, Mastura Shafinaz Zainal, et al.
Publicado: (2011)

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
por: Alathbah, Moath, et al.
Publicado: (2022)

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2022)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric
por: Gao, Xiaohui, et al.
Publicado: (2022)

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
por: Greco, Giuseppe, et al.
Publicado: (2011)

Response Enhancement of Pt–AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature
por: Vuong, Tuan-Anh, et al.
Publicado: (2021)

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
por: Zhu, Shunwei, et al.
Publicado: (2019)

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
por: Liu, Yang, et al.
Publicado: (2021)

Investigation on Surface Polarization of Al(2)O(3)-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
por: Duan, Tian Li, et al.
Publicado: (2017)

A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode
por: Zhang, Anbang, et al.
Publicado: (2019)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

An AlGaN/GaN Lateral Bidirectional Current-Regulating Diode with Two Symmetrical Hybrid Ohmic-Schottky Structures
por: Shi, Yijun, et al.
Publicado: (2022)

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019)

Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
por: Hong, Xitong, et al.
Publicado: (2022)

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
por: Lee, Ming-Wen, et al.
Publicado: (2023)

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
por: Huang, Yu-Chun, et al.
Publicado: (2021)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs
por: Cui, Peng, et al.
Publicado: (2018)

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO(x)N(y) MIS Gate
por: Kim, Hyun-Seop, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_hu0i472csfs0ba531t3ce8k1m7