Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heter...

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Detalles Bibliográficos
Autores principales: Sang, Ling, Zhu, Qin Sheng, Yang, Shao Yan, Liu, Gui Peng, Li, Hui Jie, Wei, Hong Yuan, Jiao, Chun Mei, Liu, Shu Man, Wang, Zhan Guo, Zhou, Xiao Wei, Mao, Wei, Hao, Yue, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4167304/
https://www.ncbi.nlm.nih.gov/pubmed/25258600
http://dx.doi.org/10.1186/1556-276X-9-470

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4167304/
https://www.ncbi.nlm.nih.gov/pubmed/25258600
http://dx.doi.org/10.1186/1556-276X-9-470

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