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An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process

This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilico...

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Detalles Bibliográficos
Autores principales: Yang, Ming-Zhi, Dai, Ching-Liang, Shih, Po-Jen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4168457/
https://www.ncbi.nlm.nih.gov/pubmed/25036331
http://dx.doi.org/10.3390/s140712735
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author Yang, Ming-Zhi
Dai, Ching-Liang
Shih, Po-Jen
author_facet Yang, Ming-Zhi
Dai, Ching-Liang
Shih, Po-Jen
author_sort Yang, Ming-Zhi
collection PubMed
description This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater. The sensitive material is α-Fe(2)O(3) synthesized by the hydrothermal method. The sensor requires a post-process to remove the sacrificial oxide layer between the interdigitated electrodes and to coat the α-Fe(2)O(3) on the electrodes. When the sensitive material adsorbs acetone vapor, the sensor produces a change in capacitance. The ring oscillator circuit converts the capacitance of the sensor into the oscillation frequency output. The experimental results show that the output frequency of the acetone sensor changes from 128 to 100 MHz as the acetone concentration increases 1 to 70 ppm.
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spelling pubmed-41684572014-09-19 An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process Yang, Ming-Zhi Dai, Ching-Liang Shih, Po-Jen Sensors (Basel) Article This study investigates the fabrication and characterization of an acetone microsensor with a ring oscillator circuit using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The acetone microsensor contains a sensitive material, interdigitated electrodes and a polysilicon heater. The sensitive material is α-Fe(2)O(3) synthesized by the hydrothermal method. The sensor requires a post-process to remove the sacrificial oxide layer between the interdigitated electrodes and to coat the α-Fe(2)O(3) on the electrodes. When the sensitive material adsorbs acetone vapor, the sensor produces a change in capacitance. The ring oscillator circuit converts the capacitance of the sensor into the oscillation frequency output. The experimental results show that the output frequency of the acetone sensor changes from 128 to 100 MHz as the acetone concentration increases 1 to 70 ppm. MDPI 2014-07-17 /pmc/articles/PMC4168457/ /pubmed/25036331 http://dx.doi.org/10.3390/s140712735 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Yang, Ming-Zhi
Dai, Ching-Liang
Shih, Po-Jen
An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process
title An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process
title_full An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process
title_fullStr An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process
title_full_unstemmed An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process
title_short An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process
title_sort acetone microsensor with a ring oscillator circuit fabricated using the commercial 0.18 μm cmos process
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4168457/
https://www.ncbi.nlm.nih.gov/pubmed/25036331
http://dx.doi.org/10.3390/s140712735
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