Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devic...

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Detalles Bibliográficos
Autores principales: Yakimov, Andrew, Kirienko, Victor, Timofeev, Vyacheslav, Bloshkin, Aleksei, Dvurechenskii, Anatolii
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4171572/
https://www.ncbi.nlm.nih.gov/pubmed/25249825
http://dx.doi.org/10.1186/1556-276X-9-504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4171572/
https://www.ncbi.nlm.nih.gov/pubmed/25249825
http://dx.doi.org/10.1186/1556-276X-9-504

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