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Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors
We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devic...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4171572/ https://www.ncbi.nlm.nih.gov/pubmed/25249825 http://dx.doi.org/10.1186/1556-276X-9-504 |