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Electronic materials with a wide band gap: recent developments
The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap E (g) = 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (E (g) = 1.12 eV). This im...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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International Union of Crystallography
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4174871/ https://www.ncbi.nlm.nih.gov/pubmed/25295170 http://dx.doi.org/10.1107/S2052252514017229 |