Preferential Geminal Bis-silylation of 3,4-Benzothiophane Is Caused by the Dominance of Electron Withdrawal by R(3)Si over Steric Shielding Effects

[Image: see text] Benzylic C–H lithiation of 3,4-benzothiophane and subsequent treatment with triphenyl- or trimethylchlorosilane under a variety of conditions leads to α,α- rather than α,α′-bis-silylation products as a consequence of anion stabilization by R(3)Si and very fast deprotonation of the...

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Detalles Bibliográficos
Autores principales: Han, Yifeng, Ma, Yun, Keresztes, Ivan, Collum, David B., Corey, E. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4176386/
https://www.ncbi.nlm.nih.gov/pubmed/25157594
http://dx.doi.org/10.1021/ol502348y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4176386/
https://www.ncbi.nlm.nih.gov/pubmed/25157594
http://dx.doi.org/10.1021/ol502348y

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