Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behave...

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Detalles Bibliográficos
Autores principales: Sultan, Suhana M, Ditshego, Nonofo J, Gunn, Robert, Ashburn, Peter, Chong, Harold MH
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4178550/
https://www.ncbi.nlm.nih.gov/pubmed/25276107
http://dx.doi.org/10.1186/1556-276X-9-517

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4178550/
https://www.ncbi.nlm.nih.gov/pubmed/25276107
http://dx.doi.org/10.1186/1556-276X-9-517

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