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Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors
This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behave...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4178550/ https://www.ncbi.nlm.nih.gov/pubmed/25276107 http://dx.doi.org/10.1186/1556-276X-9-517 |