An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device

Metal-aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of...

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Detalles Bibliográficos
Autores principales: Hsieh, Wen-Ching., Lee, Hao-Tien Daniel., Jong, Fuh-Cheng.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4178984/
https://www.ncbi.nlm.nih.gov/pubmed/25116901
http://dx.doi.org/10.3390/s140814553

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4178984/
https://www.ncbi.nlm.nih.gov/pubmed/25116901
http://dx.doi.org/10.3390/s140814553

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