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An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device
Metal-aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4178984/ https://www.ncbi.nlm.nih.gov/pubmed/25116901 http://dx.doi.org/10.3390/s140814553 |