Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, an...

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Detalles Bibliográficos
Autores principales: Loong, Li Ming, Qiu, Xuepeng, Neo, Zhi Peng, Deorani, Praveen, Wu, Yang, Bhatia, Charanjit S., Saeys, Mark, Yang, Hyunsoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4179128/
https://www.ncbi.nlm.nih.gov/pubmed/25266219
http://dx.doi.org/10.1038/srep06505

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4179128/
https://www.ncbi.nlm.nih.gov/pubmed/25266219
http://dx.doi.org/10.1038/srep06505

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