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Electronic properties of core-shell nanowire resonant tunneling diodes

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optima...

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Detalles Bibliográficos
Autor principal: Zervos, Matthew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4185094/
https://www.ncbi.nlm.nih.gov/pubmed/25288912
http://dx.doi.org/10.1186/1556-276X-9-509