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Electronic properties of core-shell nanowire resonant tunneling diodes

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optima...

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Detalles Bibliográficos
Autor principal:	Zervos, Matthew
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4185094/ https://www.ncbi.nlm.nih.gov/pubmed/25288912 http://dx.doi.org/10.1186/1556-276X-9-509

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