In Situ Atom Scale Visualization of Domain Wall Dynamics in VO(2) Insulator-Metal Phase Transition

A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To full...

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Detalles Bibliográficos
Autores principales: He, Xinfeng, Xu, Tao, Xu, Xiaofeng, Zeng, Yijie, Xu, Jing, Sun, Litao, Wang, Chunrui, Xing, Huaizhong, Wu, Binhe, Lu, Aijiang, Liu, Dingquan, Chen, Xiaoshuang, Chu, Junhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189024/
https://www.ncbi.nlm.nih.gov/pubmed/25292447
http://dx.doi.org/10.1038/srep06544

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189024/
https://www.ncbi.nlm.nih.gov/pubmed/25292447
http://dx.doi.org/10.1038/srep06544

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