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In Situ Atom Scale Visualization of Domain Wall Dynamics in VO(2) Insulator-Metal Phase Transition

A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To full...

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Detalles Bibliográficos
Autores principales:	He, Xinfeng, Xu, Tao, Xu, Xiaofeng, Zeng, Yijie, Xu, Jing, Sun, Litao, Wang, Chunrui, Xing, Huaizhong, Wu, Binhe, Lu, Aijiang, Liu, Dingquan, Chen, Xiaoshuang, Chu, Junhao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2014
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189024/ https://www.ncbi.nlm.nih.gov/pubmed/25292447 http://dx.doi.org/10.1038/srep06544

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