Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission

A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fab...

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Detalles Bibliográficos
Autores principales: Hung, Yung-Jr, Huang, Yung-Jui, Chang, Hsuan-Chen, Lee, Kuei-Yi, Lee, San-Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189046/
https://www.ncbi.nlm.nih.gov/pubmed/25298758
http://dx.doi.org/10.1186/1556-276X-9-540

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189046/
https://www.ncbi.nlm.nih.gov/pubmed/25298758
http://dx.doi.org/10.1186/1556-276X-9-540

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