Coexistence of memory resistance and memory capacitance in TiO(2) solid-state devices

This work exploits the coexistence of both resistance and capacitance memory effects in TiO(2)-based two-terminal cells. Our Pt/TiO(2)/TiO( x )/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence...

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Detalles Bibliográficos
Autores principales: Salaoru, Iulia, Li, Qingjiang, Khiat, Ali, Prodromakis, Themistoklis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189047/
https://www.ncbi.nlm.nih.gov/pubmed/25298759
http://dx.doi.org/10.1186/1556-276X-9-552

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189047/
https://www.ncbi.nlm.nih.gov/pubmed/25298759
http://dx.doi.org/10.1186/1556-276X-9-552

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