Electroluminescence and Photocurrent Generation from Atomically Sharp WSe(2)/MoS(2) Heterojunction p–n Diodes

[Image: see text] The p–n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here...

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Detalles Bibliográficos
Autores principales: Cheng, Rui, Li, Dehui, Zhou, Hailong, Wang, Chen, Yin, Anxiang, Jiang, Shan, Liu, Yuan, Chen, Yu, Huang, Yu, Duan, Xiangfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189621/
https://www.ncbi.nlm.nih.gov/pubmed/25157588
http://dx.doi.org/10.1021/nl502075n

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189621/
https://www.ncbi.nlm.nih.gov/pubmed/25157588
http://dx.doi.org/10.1021/nl502075n

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