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Theory of low-power ultra-broadband terahertz sideband generation in bi-layer graphene

In a semiconductor illuminated by a strong terahertz (THz) field, optically excited electron–hole pairs can recombine to emit light in a broad frequency comb evenly spaced by twice the THz frequency. Such high-order THz sideband generation is of interest both as an example of extreme nonlinear optic...

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Detalles Bibliográficos
Autores principales: Crosse, J. A., Xu, Xiaodong, Sherwin, Mark S., Liu, R. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4200518/
https://www.ncbi.nlm.nih.gov/pubmed/25249245
http://dx.doi.org/10.1038/ncomms5854