Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices

We investigate the intrinsic performance of vertical and lateral graphene-based heterostructure field-effect transistors, currently considered the most promising options to exploit graphene properties in post-CMOS electronics. We focus on three recently proposed graphene-based transistors, that in e...

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Detalles Bibliográficos
Autores principales: Logoteta, Demetrio, Fiori, Gianluca, Iannaccone, Giuseppe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4202216/
https://www.ncbi.nlm.nih.gov/pubmed/25328156
http://dx.doi.org/10.1038/srep06607

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4202216/
https://www.ncbi.nlm.nih.gov/pubmed/25328156
http://dx.doi.org/10.1038/srep06607

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