Indium segregation measured in InGaN quantum well layer

The indium segregation in InGaN well layer is confirmed by a nondestructive combined method of experiment and numerical simulation, which is beyond the traditional method. The pre-deposited indium atoms before InGaN well layer growth are first carried out to prevent indium atoms exchange between the...

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Detalles Bibliográficos
Autores principales: Deng, Zhen, Jiang, Yang, Wang, Wenxin, Cheng, Liwen, Li, Wei, Lu, Wei, Jia, Haiqiang, Liu, Wuming, Zhou, Junming, Chen, Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4206869/
https://www.ncbi.nlm.nih.gov/pubmed/25339386
http://dx.doi.org/10.1038/srep06734

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4206869/
https://www.ncbi.nlm.nih.gov/pubmed/25339386
http://dx.doi.org/10.1038/srep06734

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