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Evaluation of mobility in thin Bi(2)Se(3) Topological Insulator for prospects of Local Electrical Interconnects

Three-dimensional (3D) topological insulator (TI) has been conjectured as an emerging material to replace copper (Cu) as an interconnect material because of the suppression of elastic scattering from doping and charge impurities for carrier transport on TI surface. We, therefore via full real-space...

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Detalles Bibliográficos
Autores principales: Gupta, Gaurav, Jalil, Mansoor Bin Abdul, Liang, Gengchiau
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4213797/
https://www.ncbi.nlm.nih.gov/pubmed/25354476
http://dx.doi.org/10.1038/srep06838