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Evaluation of mobility in thin Bi(2)Se(3) Topological Insulator for prospects of Local Electrical Interconnects
Three-dimensional (3D) topological insulator (TI) has been conjectured as an emerging material to replace copper (Cu) as an interconnect material because of the suppression of elastic scattering from doping and charge impurities for carrier transport on TI surface. We, therefore via full real-space...
Autores principales: | Gupta, Gaurav, Jalil, Mansoor Bin Abdul, Liang, Gengchiau |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4213797/ https://www.ncbi.nlm.nih.gov/pubmed/25354476 http://dx.doi.org/10.1038/srep06838 |
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